|
Features and Benefits
± 0.5 µm post bond accuracy and 20 µradians leveling guarantee highest quality for the most advanced products
Bonding of devices up to 100 x 100 mm onto wafer up to 300 mm to enable large format assemblies
NIL configuration as add-on to bonding capability for maximum flexibility
Optional Gas Confinement Chamber with inert or reducing gas for in-situ removal of oxides during bonding
Air bearing construction on a granite structure ensures long-term stability and reliability
Optional integrated chamber for gang reflow in a gas or vacuum environment
High End Processes
Die Bonding (Face Up), Flip Chip Bonding (Face to Face), Mass Reflow, In-Situ Reflow, Fluxless Eutectic Bonding, Thermocompression Bonding, Ultrasonic Bonding, UV-Curing Bonding, Adhesive Bonding, UV-NIL, Hot Embossing Lithography...
FC300 Technical Specifications
SET's demo capabilities
Device Bonding Applications
Nanoimprint Lithography
Back to Products
|