技术论文

技术论文: 专注于接合!

Toward a flip-chip bonder dedicated to direct bonding for production environment

专注于接合下载

IWLPC October 24, 2017    SET, Saint-Jeoire, France

3D vertical integration of components is now an industrial reality. Considerations and results on direct bonding for HVM precise assembly are presented.
 

Results of the 2015 testbeam of 180 nm AMS High-Voltage CMOS sensor prototype

June 30, 2016专注于接合DPNC, University of Geneva, Switzerland下载

Active pixel sensors based on the High-Voltage CMOS technology are being investigated as a viable option for the future pixel tracker of the ATLAS experiment at the High-Luminosity LHC.

Evaluation of Sn-based Microbumping Technology for Hybrid IR Detectors, 10µm Pitch to 5µm Pitch

ECTC 2015专注于接合IMEC Leuven, Belgium SOFRADIR Veurey-Voroize, France下载

Hybridization of Infrared detectors has relied on Indium balling for the last decades. Whereas this well-established process has proven its reliability through out the years, it becomes challenging to further decrease the balling pitch below 10µm, due to balling volume limitation.

Development done on Device Bonder to address 3D requirements in a Production Environment

专注于接合下载

IWLPC 2014 focus on bonding SET, Saint-Jeoire, France

Key to the success of 3D integration will be the ability to accurately align and bond devices with aggressive feature sizes

Interconnect and bonding techniques for pixelated X-ray and gamma-ray detectors

7-12 September, 2014专注于接合UNIVERSITY OF SURREY, Guilford, Surrey, U.K.10th International Conference on Position Sensitive Detectors下载

In the last decade, the Detector Development at the Technology departmentof the Science and Technology Facilities Council (STFC), U.K., established a variety of fabrication and bonding techniques to build pixelated X-ray and y-ray detector systems such as the spectroscopic X-ray imaging detector HEXITEC.

Microbumping Technology for Hybrid IR detectors, 10µm pitch and beyond

EPTC 2014专注于接合IMEC Leuven, Belgium SOFRADIR Veurey-Voroize, FranceSingapore下载

In order to assess the feasability of a more mass-manufacturable process, IMEC has developed microbump technologies down to 10 µm pitch. The microbumps are based on Cu/Ni/Sn semi additive plating and built at wafer level using a process fully compatible with standard packaging infrastructures.

Development done on Device Bonder to address 3D requirements in a production environment

IWLPC 2014专注于接合SET Saint-Jeoire, FranceSan Jose, CA下载

This paper will explore the above challenges in 3D HVMand will present solutions and trade-offs using a systemslevel approach

Die Attach Bonding using High-frequency Ultrasonic Energy for High-temperature application

June 2014专注于接合IME - Journal of Electronics materials (abstract)下载

Room-temperature die-attach bonding using ultrasonic energy was evaluatedon Cu/In and Cu/Sn-3Ag metal stacks.

Wafer-level 3D integration with 5 micron interconnect pitch for infrared imaging applications

June 2014专注于接合RTI International下载

The use of 3D integration technology in focal plane array imaging devices has been shown to increase imagingcapability while simultaneously decreasing device area and power consumption, as compared to analogous 2D designs.

High Density Interconnect Bonding of Heterogeneous Materials Using Non-Collapsible Microbumps at 10 μm Pitch

June 2014专注于接合RTI International下载

This paper reports on a successful demonstration of the use and reliability of CU/SN interconnection of heterogeneous semiconductor die.

Chip to wafer copper direct bonding electrical characterization and thermal cycling

December 2013专注于接合CEA – LETI, MINATEC Campus下载

Study of the recent achievements in cooper direct bonding technology with oxide/cooper mixed surface.

Micro-tube insertion into aluminum pads: Simulation and experimental validations

IMAPS 2013专注于接合CEA – LETI, MINATEC Campus下载

Ultra-fine pitch flip-chip

9th International Conference and Exhibition on Device Packaging

This material is posted here with permission of IMAPS.

Aluminum to aluminum Bonding at Room Temperature

ECTC 2013专注于接合CEA – LETI, MINATEC Campus下载

High density and very lowpitches face to face aluminum/aluminum cold bonding is feasable when using aluminum coated micro-tubes inserted into aluminum pads.

Chip to wafer direct bonding technologies for high density 3D integration

ECTC 2012专注于接合CEA – LETI, MINATEC, STMicroelectronics, SET下载

Demonstration of chip to wafer assembly based on aligned Cu-Cu direct bonding.

A 10 μm Pitch Interconnection Technology using Micro Tube Insertion into Al-Cu for 3D Applications

ECTC 2011专注于接合CEA – LETI, MINATEC, LEM3 –CNRS/UPV-M下载

Future 3-D applications require a very low pitch for interstrata vertical interconnection. The last ITRS assessment for vertical interconnection predicts a need for...

This material is posted here with permission of IEEE.

Low-Profile 3D Silicon-on-Silicon Multi-chip Assembly

ECTC 2011专注于接合IBM T.J. Watson Research Center下载

The focus of this paper is multi-chip 3D silicon-on-silicon assembly using low-profile lead-free (Sn-Cu) solder interconnects.

This material is posted here with permission of IEEE.

Low Temperature Bonding of High Density Large Area Array Interconnects for 3D Integration

IMAPS 2010专注于接合RTI International下载

The results of bonding and stress testing of Cu/Sn-Cu bonded dice and Cu-Cu thermo-compression bonded dice....

This material is posted here with permission of Imaps.

Embedded active device packaging technology for real DDR2 memory chips

IWLPC 2010专注于接合Industrial Technology Research Institute (ITRI)下载

As high-speed, high-density, and high-performance are the primary IC development targets, packaging becomes key technology...

Originally published in the IWLPC Proceedings

Fabrication and performance of InAs/GaSb-based superlattice LWIR detectors

SPIE Defense, Sensing & Security 2010专注于接合HRL Laboratories下载

InAs/GaSb-based type II superlattices (T2SL) offer a manufacturable FPA technology with FPA size, scalability and cost advantages over HgCdTe.

Copyright 2010 SPIE

Ultrathin 3D ACA FlipChip-In-Flex Technology

ECTC 2010专注于接合Berlin Technical University, NB Technologies and Fraunhofer IZM下载

Die thickness of common, high-volume chip stacks range between 50-100 µm while thinning industry aims towards ultrathin...

This material is posted here with permission of IEEE.

Three Chips Stacking with Low Volume Solder Using Single Re-Flow Process

ECTC 2010专注于接合Institute of Microelectronics - A*STAR下载

A novel low temperature Cu-Cu bonding approach called the insertion bonding technique has been developed.

This material is posted here with permission of IEEE.

Insertion Bonding: A Novel Cu-Cu Bonding Approach for 3D Integration

ECTC 2010专注于接合IMEC and the Katholieke Universiteit Leuven下载

A novel low temperature Cu-Cu bonding approach called the insertion bonding technique has been developed.

This material is posted here with permission of IEEE.

SET Technical Bulletin N°3

February 2010专注于接合CEA-Leti, IMEC, ITRI, IME-A*Star, RTI, etc...下载

It is a compilation of articles written by our clients. Each article provides unique insights into the exciting area of C2W and C2C bonding.

RF MEMS and flip-chip for space flight demonstrator

June 2009专注于接合Thales Alenia Space下载

The next generation of telecommunication satellites payloads will require higher performances and higher..

Electrical characterization of high count, 10 µm pitch, room-temperature vertical interconnections

Device Packaging 2009专注于接合CEA-LETI下载

In order to increase the format of heterogeneous staring arrays to 2Kx2K pixels or even larger complexities, limited substrate size and cost...

This material is posted here with permission of Imaps.

New Reflow Soldering and Tip in Buried Box (TB2) Techniques For Ultrafine Pitch Megapixels Imaging Array

ECTC 2008专注于接合CEA-LETI下载

Flip chip is a high-density and highly reliable interconnection technology which is mandatory for the fabrication of high end imaging arrays.

This material is posted here with permission of IEEE.

技术论文: 专注于纳米压印!

NaPa "Library of Processes"

January 2010专注于纳米压印NaPANIL下载

This FREE 152 pages book gives all directions needed to chose and apply an alternative nano-patterning technique: it is a must read for all!Access to NaPANIL's website:=> Please click on Direct Link to download it!

UV nanoimprint lithography process optimization for electron device manufacturing on nanosized scale

November 2008专注于纳米压印IISB下载

Imprint specific process parameters like the residual layer thickness and the etch resistance of the UV polymers for the substrate etch process have to be optimized to introduce UV nanoimprint lithography (UV NIL) as a high-resolution, low-cost patterning technique... => Please click on Begin Search, type "schmitt" as person and "nanoimprint" as keyword.=> Then you will access to all latest papers!

UV nanoimprint lithography process optimization for electron device manufacturing on nanosized scale

September 2008专注于纳米压印IISB下载

It's a poster

UV nanoimprinting lithography using nanostructured quartz molds with antisticking functionalization

February 2008专注于纳米压印CNR-IMM下载

In this paper, we report the results obtained by the application of the SET FC150 equipment for UV-NIL...

会议记录

Flip-chip bonding: how to meet the high accuracy requirements ?

会议记录下载

文献摘要
Flip-chip bonding: how to meet the high accuracy requirements ?

来自。。。

Caroline Avrillier from SET at EMPC - Warsaw, Poland, September 10-13, 2017  

Flip-chip assembly for focal plane array

会议记录下载

文献摘要
Considerations, constraints and processes for reliable assembly of FPA are presented

来自。。。

Pascal Metzger from SET at IST :GST - Mumbai, India, November 25-26, 2017  

Toward a flip-chip bonder dedicated to direct bonding for production environment

会议记录下载

文献摘要
3D vertical integration of components is now an industrial reality. Considerations and results on direct bonding for HVM precise assembly are presented.

来自。。。

Pascal Metzger from SET at IWLPC - San Jose, CA, USA, October 24-25, 2017  

High Accuracy Flip-Chip Equipement

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文献摘要
Consideration on the design of high precision Flip-chip bonder for mass production.

来自。。。

Nicolas Raynaud from SET at European 3D Summit - Grenoble, France, 18-20 January 2016

Development done on Device Bonder to Address 3D Requirements in a Production Environment

会议记录下载

文献摘要
Key to the success of 3D integration will be the ability to accurately align and bond devices with aggressive feature sizes

来自。。。

Pascal Metzger from SET at IWLPC, San Jose, November 11-13, 2014

Flip-Chip Assembly FPA

会议记录下载

文献摘要
Flip-Chip Assembly for Focal Plane Array

来自。。。

Jean-Stéphane Mottet from SET at ORION - Moscow XXII International Conference Photoelectronics and Night Vision Devices, May 28th, 2014

Die-to-Die and Die-to-Wafer Bonding solution for High Density, Fine Pitch Micro-Bumped Die

会议记录下载

文献摘要
Higher density interconnection using 3-Dimensional technology implies a pitch reduction and the use of micro-bumps. The micro-bump size reduction has a direct impact on the placement accuracy needed on the die placement and flip chip bonding equipment. The paper presents a die-to-die and die-to-wafer, high accuracy, die bonding solution illustrated by the flip chip assembly of a large 2x2cm die consisting of 1 million 10µm micro-bumps at 20µm pitch.

来自。。。

Gilbert Lecarpentier from SET at Imaps Device Packaging 2012

Process and Equipment Enhancements for C2W bonding in a 3D Integration Scheme

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文献摘要
This paper will review three major areas of process or equipment development surrounding the above problems, namely the issue of throughput enhancement by using a sacrificial adhesive to temporarily tack the dice before collective bonding, the issue of prior or in-situ removal and prevention of surface oxides at the bonding interface, and the issue of local environmental control to reduce particulates and other airborne contaminants. Each of these 3 will be explored with hardware solutions proposed, along with process results on test vehicles or functional devices.

来自。。。

Keith Cooper from SET North America at IWLPC 2011

Chip-to-Wafer Technologies for High Density 3D Integration

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文献摘要
CEA-Leti partnering with SET, STMicroelectronics, ALES and CNRS-CEMES on advanced Chip-to-Wafer technologies for 3D Integration in the frame of the PROCEED project, a 4.2 Million Euros, 24 months project supported by French FIU (Fond Interministeriel Unique). Started in 2009, the goal of the PROCEED project is to demonstrate high alignment accuracy (<1µm) of chip-to-wafer structures made by direct metallic bonding.

来自。。。

Penned by CEA Leti, Minatec campus, CNRS Cemes, ALES, SET, ST Microelectronics and presented at MinaPad 2011

3D-IC Integration using D2C or D2W Alignment Schemes together with Local Oxide Reduction

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文献摘要
3-Dimensional interconnection of high density integrated circuits enables building devices with greater functionality with higher performances in a smaller space. This paper explores the chip-to-chip and chip-to-wafer alignment and the associated bonding techniques such as in-situ reflow or thermocompression with a local oxide reduction which contributes to higher yield together with reduction of the force or temperature requirements.

来自。。。

Gilbert Lecarpentier from SET at Imaps Device Packaging 2011

Flip-chip die bonding: an enabling technology for 3D integration

会议记录

文献摘要
3-Dimensional Integration of Integrated Circuits is a method to build greater functionality into ever-smaller spaces for electronic circuitry, wherein dice of varying sizes, materials, or even application types are electrically and mechanically bonded together.

来自。。。

Keith Cooper from SET North America at IWLPC 2010

Die-to-wafer bonding of thin dies using a 2-step approach: high accuracy placement, then gang bonding

会议记录下载

文献摘要
25 um thick dies, mounted on thick carrier die, were placed on a 300mm landing wafer using the High Accuracy Die Bonder SET-FC300. The bonding process was either Cu/Cu or Cu/Sn with respective pitch of 108 µm and 408 µm...

来自。。。

Gilbert Lecarpentier from SET at Imaps Device Packaging 2010

纳米压印光刻技术

NPS300纳米印刻步进机

纳米压印光刻技术

纳米压印光刻技术

纳米结构的低成本生产方案正在开发中,这可能是半导体、MOEMS与光电子技术未来发展的驱动力。特别是,纳米压印光刻技术(NIL)及其变体已发展成为一种具有成本效益的技术,它可以替代高分辨率电子束光刻技术来印刷小于20纳米的几何形状。

印刻的原理是采用热机械或是紫外线固化工艺,使用带有纳米图案的印模对聚合物薄膜进行机械按压。带有图案的聚合物可以作为最终设备,例如成像传感器的透镜、微流控芯片、生物医学阵列等。它也可以作为一种高分辨率掩模应用于随后的工艺步骤中。

印刻是一种简单的光刻技术。它有三个基本的工艺步骤:

  • 将印模与已预涂印刻材料的基板进行对准
  • 将印模压入印刻材料以转印印模表面上的图案
  • 将印模从印刻材料中分离出来

我们可以描述三种印刻或压印技术:热压印光刻技术 (HEL),其使用热塑性材料;紫外纳米压印技术(UV-NIL),其使用液体抗蚀剂并在成型后用紫外光进行固化;以及软光刻技术,其使用冲压方法将预先在软印模上处理好的油墨转印到基板上。

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